ANR VanaSiC : Epitaxial growth of vanadium-doped SiC for the fabrication of back-grid graphene components

_{ANR VanaSiC (2023-2026)}

Partners :

The VanaSiC project has three complementary objectives:

Development of vanadium-doped SiC (SiC:V): Growth of vanadium-doped silicon carbide epitaxial layers on on-axis SiC substrates to obtain high-resistivity films useful in electronics and quantum technologies.
Growth of graphene with a hydrogen interface: Epitaxy of graphene (mono- or bilayer) on buried SiC:V grids, with a hydrogen interface for precise control of charge carrier density.
Development of graphene-based devices: Integration of these structures into two types of devices: a quantum Hall effect resistance standard (QHRS) and a graphene field-effect transistor (GraFET) for the detection of terahertz waves.

SiC:V: Allows compensation of residual doping and the production of high-resistivity layers, more stable than current chemical doping methods. The incorporation of V is studied through optical and electrical measurements.
Charge Carrier Control: The hydrogenated interface enables fine-tuning around the neutral point, essential for electronic and quantum applications.
Targeted Applications:

QHRS: Resistance standard operating under relaxed conditions, useful for metrology (LNE).
GraFET: Terahertz wave detector, potentially more powerful than current detectors.

Industrial: New product (SiC:V) for the partner company; development of metrological tools for LNE.
Scientific: Open access publications on the growth and properties of SiC and graphene, device physics, THz applications, and metrology.
Dissemination: Online seminars for laboratories and companies.

In summary, VanaSiC combines hardware innovation, electronic control and practical applications, with strong industrial and scientific potential.

This project is being carried out in collaboration between the TEST and TQNS teams from the PA axis.