L2C

High temperature RTP furnace

Graphene growth by silicon carbide (SiC) sublimation is carried out in a prototype chamber (Annealsys HTA-100) under low argon pressure. The furnace can also be used in Chemical Vapor Deposition (CVD) configuration.

  • Available gas lines: Ar, N₂, CH₄, C₂H₄, C₃H₈, H₂;
  • Maximum temperature: 2000 °C, with ramp rates up to 10 °C/s;
  • Pressure range: from atmospheric to 10⁻⁶ mbar.